50 nm Hall sensors for room temperature scanning Hall probe microscopy

被引：64

作者：

Sandhu, A

Kurosawa, K

Dede, M

Oral, A

机构：

[1] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Tokyo 1528552, Japan

[2] Hitachi Sci Syst Ltd, Hitachi, Ibaraki 3120057, Japan

[3] Bilkent Univ, Dept Phys, TR-06533 Bilkent, Turkey

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 02期

关键词：

scanning Hall probe microscopy; nanomagnetics; Hall sensors; magnetic domains;

D O I：

10.1143/JJAP.43.777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bismuth nano-Hall sensors with dimensions similar to50 nm x 50 nm were fabricated using a combination of optical lithography and focused ion beam milling. The Hall coefficient, series resistance and optimum magnetic field sensitivity of the sensors were 4 x 10(-4) Omega/G 9.1 kOmega and 0.8 G/ rootHz, respectively. A 50 nm nano-Bi Hall sensor was installed into a room temperature scanning Hall probe microscope and successfully used for directly imaging ferromagnetic domains of low coercivity garnet thin films.

引用

收藏

页码：777 / 778

页数：2

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