A Pt/Ga2O3-ZnO/SiC Schottky diode-based hydrocarbon gas sensor

被引：38

作者：

Trinchi, A ^{[1
]}

Galatsis, K

Wlodarski, W

Li, YX

机构：

[1] RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic, Australia

[2] Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai, Peoples R China

来源：

IEEE SENSORS JOURNAL | 2003年 / 3卷 / 05期

关键词：

Ga2O3; propene; Schottky diode; silicon carbide (SiC); zinc oxide (ZnO);

D O I：

10.1109/JSEN.2003.817670

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a novel me-tal-reactive insulator-silicon carbide device with a catalytic layer for hydrocarbon gas-sensing is presented. This structure, employed as a Schottky diode, utilizes sol-gel prepared Ga2O3-ZnO layer as the reactive insulator. The sensor has been exposed to propene gas, which lowers the barrier height of the diode. The responsies were stable and repeatable at operating temperatures between 300 and 600 degreesC. The response to propene in different ambients was examined. The effect of diode bias has been investigated by analyzing the sensors response to various propene concentrations when held at constant currents of 2 and 8 mA.

引用

页码：548 / 553

页数：6

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