Influence of gap states on the electrical stability of pentacene thin film transistors

被引：12

作者：

Benor, A. ^{[1
]}

Knipp, D. ^{[1
]}

Northrup, J. ^{[2
]}

Voelkel, A. R. ^{[2
]}

Street, R. A. ^{[2
]}

机构：

[1] Jacobs Univ Bremen, Sch Sci & Engn, Electron Devices & Nanophoton Lab, D-28759 Bremen, Germany

[2] Palo Alto Res Ctr, Elect Mat & Devices Lab, Palo Alto, CA 94304 USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2008年 / 354卷 / 19-25期

关键词：

thin film transistors; band structures; defects;

D O I：

10.1016/j.jnoncrysol.2007.10.093

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The influence of oxygen induced gap states on the device operation and the stability of polycrystalline pentacene thin film transistors (TFTs) was investigated by electrical in situ measurements. Unexposed devices are stable, whereas devices exposed to dry oxygen exhibit a shift of the threshold voltage upon prolonged device operation. Stressing the transistor in the on-state (negative bias) leads to a shift of the threshold voltage towards negative gate voltages, whereas prolonged bias stress in the off-state causes a shift of the threshold voltage in the opposite direction. The gap states are formed 0.18 eV (acceptor-like states) and 0.62 eV (donor-like states) above the valence band maxima. The charge carrier mobility and the on/off ratio of the transistor are not affected by the gap states. A simple density-of-states model will be presented, which allows for the explanation of the experimental results. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2875 / 2878

页数：4

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