Long wavelength lasers on GaAs substrates

被引：14

作者：

Fehse, R ^{[1
]}

Marko, I ^{[1
]}

Adams, AR ^{[1
]}

机构：

[1] Univ Surrey, Dept Phys, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

来源：

IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 2003年 / 150卷 / 06期

关键词：

D O I：

10.1049/ip-cds:20030959

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A compact review is given of the development of the device performance of GaAs-based long wavelength diode lasers with emission wavelengths from 1.3 to 1.55 mum. The main focus is on GaInNAs quantum wells and InAs quantum dot lasers. However, the Ga(In)AsSb material system is also briefly considered. The latest results of the present authors are discussed in relation to the trends observed in the review. These suggest that Auger recombination is an important intrinsic recombination mechanism in both 1.3 mum GalnNAs-based quantum well and InAs-based quantum dot lasers.

引用

页码：521 / 528

页数：8

共 84 条

[1] GaAsSb:: A novel material for 1.3μm VCSELs [J].

Anan, T ;

Nishi, K ;

Sugou, S ;

Yamada, M ;

Tokutome, K ;

Gomyo, A .

ELECTRONICS LETTERS, 1998, 34 (22) :2127-2129

[2] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[3] GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS [J].

ASADA, M ;

MIYAMOTO, Y ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1915-1921

[4] Temperature dependence of the threshold current density of a quantum dot laser [J].

Asryan, LV ;

Suris, RA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (05) :841-850

[5] Quantum-dot vertical-cavity surface-emitting lasers [J].

Bimberg, D ;

Ledentsov, NN ;

Lott, JA .

MRS BULLETIN, 2002, 27 (07) :531-537

[6] Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes [J].

Borchert, B ;

Egorov, AY ;

Illek, S ;

Riechert, H .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (06) :597-599

[7]

Casey H. C., 1978, HETEROSTRUCTURE LA A, P180

[8] InAs quantum-dot lasers operating near 1.3μm with high characteristic temperature for continuous-wave operation [J].

Chen, H ;

Zou, Z ;

Shchekin, OB ;

Deppe, DG .

ELECTRONICS LETTERS, 2000, 36 (20) :1703-1704

[9]

CHOQUETTE KD, 2000, ELECT LETT, V36

[10] Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy [J].

Coldren, CW ;

Spruytte, SG ;

Harris, JS ;

Larson, MC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1480-1483

← 1 2 3 4 5 6 7 8 9 →