Use of ferroelectric gate insulator for thin film transistors with ITO channel

被引：44

作者：

Tokumitsu, E ^{[1
]}

Senoo, M ^{[1
]}

Miyasako, T ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 80卷

关键词：

ferroelectric film; ferroelectric-gate transistor; nonvolatile memory; thin film transistor; ITO; (Bi; La)(4)Ti3O12;

D O I：

10.1016/j.mee.2005.04.017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Typical n-channel transistor characteristics with nonvolatile memory operation of ferroelectric-gate thin film transistors (TFTs) using indium-tin-oxide (ITO) channel have been demonstrated. It is shown that relatively large "on" current can be obtained in ITO/(Bi,La)(4)Ti3O12(BLT) TFTs. Since the calculated field-effect mobility is as small as 4 cm(2)/VS, the large "on" current is due to the large charge density induced by the ferroelectric gate insulator. It is also shown that the thin conductive ITO channel can be depleted completely by the ferroelectric polarization and "off' current of the device is as low as 10(-7) A. Drain current - gate voltage characteristics exhibit counterclockwise hysteresis due to the ferroelectric nature of the gate insulator, which demonstrates nonvolatile memory operation. The memory window is approximately 4 V, which agrees with the theoretical calculation. In addition, no change in both "on" and "off' currents has been observed up to 10(3) s.

引用

页码：305 / 308

页数：4

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