Fabrication of quantum point contacts and quantum dots by imprint lithography

被引：9

作者：

Martini, I

Kamp, M

Fischer, F

Worschech, L

Koeth, J

Forchel, A

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

[2] Nanoplus Nanosyst & Technol GmbH, D-97074 Wurzburg, Germany

来源：

MICROELECTRONIC ENGINEERING | 2001年 / 57-8卷

关键词：

nanoimprint; mix-and-match fabrication; quantum point contact; quantum dot;

D O I：

10.1016/S0167-9317(01)00446-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the integration of imprint lithography into nanoelectronic device fabrication. The gates of quantum point contacts and quantum dots were patterned by imprint lithography. A Si mold with the gate pattern is embossed into a PMMA film located on top of the GaAs/AlGaAs heterostructure. The Schottky gates are fabricated by metal evaporation and lift-off. The gate tip separation ranges from 120 to 600 mn for the quantum point contacts and from 100 to 1000 mn for the quantum dots. Transport studies performed at T = 4.2 K show conductance quantization with varying gate voltages for the split-gate quantum point contacts and the upper and lower split-gates of the quantum dot. (C) 2001 Elsevier Science BY All rights reserved.

引用

页码：397 / 403

页数：7

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