Theoretical calculation of the electron Hall mobility in n-type 4H-and 6H-SiC

被引：16

作者：

Iwata, H ^{[1
]}

Itoh, KM ^{[1
]}

机构：

[1] Keio Univ, Dept Appl Phys & Physicoinformat, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

electron transport; Hall effect; mobility;

D O I：

10.4028/www.scientific.net/MSF.338-342.729

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the theoretical calculation of the electron Hall mobility in nitrogen doped n-type 4H- and 6H-SiC as a function of temperature, net-doping concentration ([N-D]-[N-A]), and compensation ratio ([N-A]/[N-D]) The electron Hall mobility is found for two temperatures, T=77K and 300K, covering a wide range of the net-doping concentration (10(14)-10(19)[cm(-3)]) and the compensation ratio (0-0.6).

引用

页码：729 / 732

页数：4

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