Preparation of GaN films on sapphire by metalorganic chemical vapor deposition using dimethylhydrazine as nitrogen source

We report the preparation of high quality GaN films using dimethylhydrazine as a nitrogen source. GaN films were deposited on (0001) sapphire substrates by low-pressure metalorganic chemical vapor deposition. The film has excellent morphology in flat surface free from cracks. The full width at half maximum of the x-ray diffraction rocking curve measured from (0002) plane of GaN has exhibited as narrow as 147 arcsec. The optical quality of the film is concluded to be excellent from the photoluminescence property measured at room temperature, where the intensity of the band edge emission is much stronger than that of deep level emission. (C) 1996 American Institute of Physics.