Modeling of grain growth mechanism by nickel silicide reactive grain boundary effect in metal-induced-lateral-crystallization

被引：16

作者：

Cheng, CF ^{[1
]}

Poon, VMC ^{[1
]}

Kok, CW ^{[1
]}

Chan, MS ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 06期

关键词：

crystallization; grain growth; polysilicon; thin-film transistor;

D O I：

10.1109/TED.2003.813521

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth mechanism of metal-induced-lateral-crystallization (MILC) was studied and modeled. Based on the time evolution of the metal impurity in the amorphous silicon film being crystallized, a model has been developed to predict the growth rate and the final metal distribution in the crystallized polysilicon. The model prediction has been compared with experimental results and high prediction accuracy is demonstrated. Using the model, the effects of annealing temperature, annealing time and initial metal concentration on the final grain size and metal impurity distribution can be analyzed. As a result, the model can be used to optimize the grain growth conditions for fabricating high performance thin-film-transistors on the recrystallized polysilicon film.

引用

页码：1467 / 1474

页数：8

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