Reaction path for Te during surfactant-mediated epitaxial growth of GaAs (100)

被引：5

作者：

Consorte, CD ^{[1
]}

Fong, CY

Watson, MD

Yang, LH

Ciraci, S

机构：

[1] Univ Calif Davis, Dept Phys, Davis, CA 95616 USA

[2] Lawrence Livermore Natl Lab, Livermore, CA 94551 USA

[3] Bilkent Univ, Dept Phys, TR-06533 Bilkent, Turkey

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.63.041301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using first-principles calculations and experimental evidence concerning the essential environment for surfactant-mediated epitaxial growth on the GaAs/Te(100) surface, we determine a short-ranged reaction path for the As <----> Te exchange that is energetically favorable and prepares the surface for continued layer-by-layer growth. Furthermore, we explain the required partial coverage of the surfactant atoms as well as the required presence of both As and Ga adatoms.

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页数：4

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