High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy

被引：14

作者：

Tappura, K ^{[1
]}

Aarik, J ^{[1
]}

Pessa, M ^{[1
]}

机构：

[1] TAMPERE UNIV TECHNOL,DEPT PHYS,SF-33101 TAMPERE,FINLAND

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 03期

基金：

芬兰科学院;

关键词：

D O I：

10.1109/68.481103

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow ridge structures were 300 A/cm(2) and 330 A/cm(2) for pulsed and continuous wave operation, respectively, The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work, The internal quantum efficiency of 87-89% and the internal losses of 7-10 cm(-1) were obtained.

引用

页码：319 / 321

页数：3

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