A novel wrap-gate-controlled single electron transistor formed on an InGaAs ridge quantum wire grown by selective MBE

被引：11

作者：

Okada, H ^{[1
]}

Fujikura, H

Hashizume, T

Hasegawa, H

机构：

[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Sapporo, Hokkaido 060, Japan

[2] Hokkaido Univ, Grad Sch Elect & Informat Engn, Sapporo, Hokkaido 060, Japan

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 7-8期

基金：

日本学术振兴会;

关键词：

Number:; -; Acronym:; KAKEN; Sponsor: Japan Society for the Promotion of Science; MEXT; Sponsor: Ministry of Education; Culture; Sports; Science and Technology;

D O I：

10.1016/S0038-1101(98)00041-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An attempt was made, for the first time, to fabricate a novel Schottky wrap gate (WPG) controlled single electron transistor (SET) directly on to an InGaAs stereographic ridge quantum wire grown by molecular beam epitaxy (MBE). To analyze the controllability of the quantum dot by Schottky WPG, a computer simulation of potential distribution was carried out. The fabricated SET showed clear conductance oscillation with an effective Coulomb gap of 10 meV. Comparison of the observed experimental behavior with simulation indicates that the SET is in the quantum confinement regime with resonant tunneling. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1419 / 1423

页数：5

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