共 32 条
Anisotropic electrical conduction of vertically-aligned single-walled carbon nanotube films
被引:32
作者:
Lin, Cheng-Te
[2
]
Lee, Chi-Young
[2
,3
]
Chin, Tsung-Shune
[4
]
Xiang, Rong
[5
]
Ishikawa, Kei
[1
]
Shiomi, Junichiro
[1
]
Maruyama, Shigeo
[1
]
机构:
[1] Univ Tokyo, Dept Mech Engn, Bunkyo Ku, Tokyo 1138656, Japan
[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
[3] Natl Tsing Hua Univ, Ctr Nanotechnol Mat Sci & Microsyst, Hsinchu 30013, Taiwan
[4] Feng Chia Univ, Dept Mat Sci & Engn, Taichung 40724, Taiwan
[5] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, HKUST SYSU Joint Lab Nano Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
来源:
关键词:
GROWTH;
TRANSPORT;
FORESTS;
DEVICES;
ARRAYS;
SENSOR;
D O I:
10.1016/j.carbon.2010.12.014
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Anisotropic electrical conduction measurements have been carried out for thin films of vertically-aligned single-walled carbon nanotubes (VA-SWCNTs) grown by an alcohol catalytic CVD process. Combined with controlled synthesis and structure characterization by optical spectroscopy, the influence of the aligned structure on the electrical conduction has been identified. The out-of-plane conductivity of the films was measured to be about 0.56 S/mm, independently of the film thickness. On the other hand, the in-plane conductivity was found to be more than an order of magnitude smaller, which gives rise to highly anisotropic electrical conduction, reflecting the high degree of alignment in the VA-SWCNT films. The in-plane conductivity decreases with increasing film thickness, in contrast to the film of random SWCNT networks, which exhibit thickness-independent in-plane resistance. The thickness-dependent in-plane conductivity can be expounded by a growth model of vertically aligned SWCNT films in which a thin layer of nanotube networks form on top of films at the initial stage of the growth. Such electrical anisotropy of VA-SWCNT films can be useful in miniaturized sensing devices. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1446 / 1452
页数:7
相关论文