Growth and electronic properties of ZnO epilayers by plasma-assisted molecular beam epitaxy

ZnO thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy (MBE). The crystalline properties of the layers as measured by x-ray diffraction were found to improve with lower growth temperatures, where the full-width at half-maximum (FWHM) of the x-ray rocking curves was shown to be in the range of 100 to 1,100 arcsec. The electronic properties were found to improve for higher growth temperatures, with n-type carrier concentration and electron mobility in the range of 1 X 10(17)-5 X 10(18) cm(-3) and 80-36 cm(2)/Vs, respectively. Photoluminescence (PL) measurements indicated that growth at higher temperatures provided superior band edge radiative emission, while growth at lower temperatures resulted in significant deep level radiative emission centered at 2.35 eV. Photoconductive decay measurements exhibit a slow decay indicating the presence of hole traps, where Zn vacancies are believed to be the source of both the slow decay and the deep level emission observed in PL spectra.