Atomic force microscope topographical artifacts after the dielectric breakdown of ultrathin SiO2 films

被引：28

作者：

Porti, M

Nafría, M

Blüm, MC

Aymerich, X

Sadewasser, S

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

[2] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

SURFACE SCIENCE | 2003年 / 532卷

关键词：

atomic force microscopy; dielectric phenomena; electrical transport (conductivity; resistivity; mobility; etc.);

D O I：

10.1016/S0039-6028(03)00150-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Atomic force microscopy based techniques have been used to analyse at a nanometer scale the topographical features measured in microelectronic SiO2 layers after their dielectric breakdown (BD). The results show that the morphological changes are not real modifications of the oxide surface, but a consequence of the electrostatic interactions between the tip and the negative charge induced in the oxide during the BD event. (C) 2003 Elsevier Science B.V. All rights reserved.

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收藏

页码：727 / 731

页数：5

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