Gate length scaling study of InAlAs/InGaAs/InAsP composite channel HEMTs

被引：7

作者：

Liu, Dongmin ^{[1
]}

Hudait, Mantu ^{[1
]}

Lin, Yong ^{[1
]}

Kim, Hyeongnam ^{[1
]}

Ringel, Steven A. ^{[1
]}

Lu, Wu ^{[1
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

来源：

SOLID-STATE ELECTRONICS | 2007年 / 51卷 / 06期

基金：

美国国家科学基金会;

关键词：

InP; InAsP; high electron mobility transistors; composite channel;

D O I：

10.1016/j.sse.2007.04.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dependence of direct current and microwave performance of InGaAs/InAsP composite channel HEMTs on gate length is presented experimentally. Composite channel HEMTs with gate length from 1.13 mu m to 0.15 mu m were fabricated. Device characterization results showed the extrinsic transconductance increased from 498 mS/mm for 1.13 mu m devices to 889 mS/mm for 0.15 mu m gate devices, while the unity current gain cutoff frequency increased from 24 GHz to 190 GHz. A simple delay time analysis is employed to extract the effective carrier velocity (v(eff)) of the composite channel. The v(eff) is determined to be 1.9 x 10(7) cm/s. To our knowledge, this is the first systematic study on gate length scaling effect of composite channel HEMTs. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：838 / 841

页数：4

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