94 GHz high power performances of InAs0.4P0.6 channel HEMTs on InP

被引：1

作者：

Medjdoub, F ^{[1
]}

Zaknoune, M ^{[1
]}

Wallart, X ^{[1
]}

Gaquière, C ^{[1
]}

Theron, D ^{[1
]}

机构：

[1] CNRS, UMR 8520, Inst Elect Microelect & Nanotechnol, Dept Hyperfrequences & Semicond, F-59652 Villeneuve Dascq, France

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 13期

关键词：

D O I：

10.1049/el:20051511

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High power performances at 94 GHz using an innovating large bandgap InAsP channel high electron mobility transistor on InP substrate containing an lnP/AlInAs composite barrier are reported. This 100 nm gate HEMT exhibits a high current density of 600 mA/mm, and an extrinsic transconductance of 850 mS/mm. The off state breakdown is greater than 5.5 V and defined at a gate current density of I mA/mm. At 94 GHz, they demonstrated a maximum output power of 260 mW/mm at 3 V of drain voltage with 5.9 dB power gain and a power added efficiency (PAE) of 11%. This is believed to be the best combination between output power density and power gain of any InP HEMT reported at this frequency.

引用

页码：769 / 771

页数：3

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