Deformable transparent all-carbon-nanotube transistors

被引：40

作者：

Aikawa, Shinya ^{[1
,2
]}

Einarsson, Erik ^{[1
,3
]}

Thurakitseree, Theerapol ^{[1
]}

Chiashi, Shohei ^{[1
]}

Nishikawa, Eiichi ^{[2
]}

Maruyama, Shigeo ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mech Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Tokyo Univ Sci, Dept Elect Engn, Shinjuku Ku, Tokyo 1628601, Japan

[3] Univ Tokyo, Global Ctr Excellence Mech Syst Innovat, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 06期

关键词：

THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE; INTEGRATED-CIRCUITS; ELECTRONICS; FABRICATION; GROWTH; SEMICONDUCTORS; DIELECTRICS; ARRAYS;

D O I：

10.1063/1.3683517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated polymer-laminated, transparent, all-carbon-nanotube field-effect transistors (CNT-FETs), making use of the flexible yet robust nature of single-walled carbon nanotubes (SWNTs). All components of the FET (active channel, electrodes, dielectric layer, and substrate) consist of carbon-based materials. The use of a plastic substrate that is considerably thinner than those used in other flexible CNT-FETs allowed our devices to be highly deformable without degradation of electrical properties. Using this approach, flexible, transparent CNT-FET devices able to withstand a 1 mm bending radius were realized. (C) 2012 American Institute of Physics. [doi:10.1063/1.3683517]

引用

页数：4

共 36 条

[1] Facile fabrication of all-SWNT field-effect transistors [J].

Aikawa, Shinya ;

Xiang, Rong ;

Einarsson, Erik ;

Chiashi, Shohei ;

Shiomi, Junichiro ;

Nishikawa, Eiichi ;

Maruyama, Shigeo .

NANO RESEARCH, 2011, 4 (06) :580-588

[2] Simple Fabrication Technique for Field-Effect Transistor Array Using As-Grown Single-Walled Carbon Nanotubes [J].

Aikawa, Shinya ;

Einarsson, Erik ;

Inoue, Taiki ;

Xiang, Rong ;

Chiashi, Shohei ;

Shiomi, Junichiro ;

Nishikawa, Eiichi ;

Maruyama, Shigeo .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)

[3] Transparent and flexible carbon nanotube transistors [J].

Artukovic, E ;

Kaempgen, M ;

Hecht, DS ;

Roth, S ;

GrUner, G .

NANO LETTERS, 2005, 5 (04) :757-760

[4] Inkjet printing of transparent, flexible, organic transistors [J].

Basirico, Laura ;

Cosseddu, Piero ;

Fraboni, Beatrice ;

Bonfiglio, Annalisa .

THIN SOLID FILMS, 2011, 520 (04) :1291-1294

[5] Plastic deformations in mechanically strained single-walled carbon nanotubes [J].

Bozovic, D ;

Bockrath, M ;

Hafner, JH ;

Lieber, CM ;

Park, H ;

Tinkham, M .

PHYSICAL REVIEW B, 2003, 67 (03)

[6] Flexible nanotube electronics [J].

Bradley, K ;

Gabriel, JCP ;

Grüner, G .

NANO LETTERS, 2003, 3 (10) :1353-1355

[7] Highly bendable, transparent thin-film transistors that use carbon-nanotube-based conductors and semiconductors with elastomeric dielectrics [J].

Cao, Q ;

Hur, SH ;

Zhu, ZT ;

Sun, YG ;

Wang, CJ ;

Meitl, MA ;

Shim, M ;

Rogers, JA .

ADVANCED MATERIALS, 2006, 18 (03) :304-+

[8] Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates [J].

Cao, Qing ;

Kim, Hoon-sik ;

Pimparkar, Ninad ;

Kulkarni, Jaydeep P. ;

Wang, Congjun ;

Shim, Moonsub ;

Roy, Kaushik ;

Alam, Muhammad A. ;

Rogers, John A. .

NATURE, 2008, 454 (7203) :495-U4

[9] Bilayer organic-inorganic gate dielectrics for high-performance, low-voltage, single-walled carbon nanotube thin-film transistors, complementary logic gates, and p-n diodes on plastic substrates [J].

Cao, Qing ;

Xia, Ming-Gang ;

Shim, Moonsub ;

Rogers, John A. .

ADVANCED FUNCTIONAL MATERIALS, 2006, 16 (18) :2355-2362

[10] Ultraflexible amorphous silicon transistors made with a resilient insulator [J].

Han, Lin ;

Song, Katherine ;

Mandlik, Prashant ;

Wagner, Sigurd .

APPLIED PHYSICS LETTERS, 2010, 96 (04)

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