Ferromagnetic ordering of n-type (Ga,Mn)N epitaxial films

被引:11
作者
Lee, JM
Lee, KI
Chang, JY
Ham, MH
Huh, KS
Myoung, JM
Hwang, WJ
Shin, MW
Han, SH
Kim, HJ
Lee, WY
机构
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[2] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 130650, South Korea
[3] Myong Ji Univ, Dept Ceram Engn, Yongin Si 449728, Kyunggi Do, South Korea
关键词
diluted magnetic semiconductor; carrier-mediated ferromagnetism; wide bandgap ferromagnetic semiconductor; negative magnetoresistance;
D O I
10.1016/S0167-9317(03)00311-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The magnetic and magnetotransport properties of epitaxial (Ga1-xMnx)N films with low Mn concentration (x=0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy have been investigated. Ferromagnetic ordering for the GaMnN is clearly seen in the temperature range 4-300 K. The M-T curves were fitted with theoretical equations based on the mean field theory in order to estimate Curie temperature (T-c), providing T-c approximate to 550 K and T-c approximate to 700 K, respectively, for the (Ga,Mn)N films with x=0.16% and x=0.50%. Temperature dependence of sheet resistance is found to show negative magneto-resistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:283 / 287
页数:5
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