Stress evolution during Fe(001) epitaxy on GaAs(001)

被引：32

作者：

Wedler, G

Wassermann, B

Nötzel, R

Koch, R

机构：

[1] Free Univ Berlin, Inst Expt Phys, D-14195 Berlin, Germany

[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 09期

关键词：

D O I：

10.1063/1.1351527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on in situ stress measurements of Fe/GaAs(001), which enlighten the dynamics of the interface formation of this important magnetic metal/semiconductor system. At deposition temperatures of 300 and 450 K, the stress evolution during growth is very similar. In Fe films thicker than 6-7 nm, the stress is compressive owing to the misfit between the lattices of Fe and GaAs. Thinner films surprisingly are dominated by a tensile stress contribution due to considerable As (and Ga) interdiffusion even at 300 K. (C) 2001 American Institute of Physics.

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页码：1270 / 1272

页数：3

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