Patterned structures of silicon nanocrystals prepared by laser annealing

被引：6

作者：

Wang, ZY ^{[1
]}

Li, J

Huang, XF

Wang, L

Xu, J

Chen, KJ

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2001年 / 117卷 / 06期

关键词：

semiconductors; phase transitions; luminescence;

D O I：

10.1016/S0038-1098(00)00463-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Patterned structures of nanocrystalline silicon have been fabricated in the films of sandwiched structure (a-SiNx:H /a-Si:H/a-SiNx:H) on the substrate prepared by plasma-enhanced chemical vapor deposition from highly diluted silane and ammonia. The a-Si:H layer in the films are crystallized by excimer laser annealing. Phase transition takes place in the regions where the bright stripes of laser interference occur by means of a grating, whereas no phase transition appears in the dark area. The thickness of a-Si:H layer determines the sizes of the nanocrystals because they cannot extend into the a-SiNx:H confining layers. With increasing laser intensity, the stripe region looks melted and a hole-structure is formed. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：383 / 386

页数：4

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