Transport phenomena in an atmospheric-pressure townsend discharge fed by N2/N2O/HMDSO mixtures

被引：53

作者：

Enache, Ionut ^{[1
]}

Caquineau, Hubert ^{[1
]}

Gherardi, Nicolas ^{[1
]}

Paulmier, Thierry ^{[1
]}

Maechler, Louison ^{[1
]}

Massines, Francoise ^{[1
]}

机构：

[1] Univ Toulouse 3, Lab LAPLACE, Toulouse, France

来源：

PLASMA PROCESSES AND POLYMERS | 2007年 / 4卷 / 09期

关键词：

atmospheric pressure glow discharges (APGD); dielectric barrier discharges (DBD); hexamethyldisiloxane (HMDSO); modeling; thin-film deposition;

D O I：

10.1002/ppap.200700073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper focuses on the understanding of the main mechanisms that participate in the growth process of an SiO2-like film in an atmospheric pressure Townsend discharge in N-2 with small ad-mixtures of HMDSO and N2O. The approach consists of analyzing the influence of operating parameters on the growth rate profile through a fluid dynamics model. The suggested chemical mechanism is constituted by one volume reaction and one surface reaction. This simple model enables us to assume which phenomena control the film growth process among the U) following mechanisms: HMDSO dissociation by N-2(A(3)Sigma(+)(u)) in Si-containing radicals, radicals transport to the surface, and surface activation process by plasma.

引用

页码：806 / 814

页数：9

共 18 条

[11] Atmospheric pressure plasma deposition of thin films by Townsend dielectric barrier discharge [J].