Superlattice AlAs/AlInAs-oxide current aperture for long wavelength InP-based vertical-cavity surface-emitting laser structure

被引：16

作者：

Ohnoki, N ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 22期

关键词：

D O I：

10.1063/1.122738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A superlattice AlAs/AlInAs structure which can be formed on an InP substrate is proposed and demonstrated for use in oxide confinement long wavelength surface emitting lasers. The large strain of AlAs layers is relaxed by the use of a superlattice structure showing no defects and uniform oxidations. Also, an AlAs layer on an InP substrate provides us with a relatively large heterobarrier, and will be useful for improving temperature characteristics of long-wavelength vertical-cavity surface-emitting lasers. A current aperture of a few micrometers in diameter was formed by precisely controlling the oxidation time. We have demonstrated a current confinement by this oxide aperture. Low-threshold long-wavelength vertical-cavity surface-emitting lasers with this oxide confinement structure are expected. (C) 1998 American Institute of Physics. [S0003-6951(98)02348-1].

引用

页码：3262 / 3264

页数：3

共 9 条

[1]

Blum O, 1996, APPL PHYS LETT, V68, P3129, DOI 10.1063/1.115800

[2] ELECTRON REFLECTANCE OF MULTIQUANTUM BARRIER (MQB) [J].

IGA, K ;

UENOHARA, H ;

KOYAMA, F .

ELECTRONICS LETTERS, 1986, 22 (19) :1008-1010

[3] Lateral wet oxidation of AlxGa1-xAs-GaAs depending on its structures [J].

Kim, JH ;

Lim, DH ;

Kim, KS ;

Yang, GM ;

Lim, KY ;

Lee, HJ .

APPLIED PHYSICS LETTERS, 1996, 69 (22) :3357-3359

[4] Submilliamp long wavelength vertical cavity lasers [J].

Margalit, NM ;

Babic, DI ;

Streubel, K ;

Mirin, RP ;

Naone, RL ;

Bowers, JE ;

Hu, EL .

ELECTRONICS LETTERS, 1996, 32 (18) :1675-1677

[5] Surface energy model for the thickness dependence of the lateral oxidation of AlAs [J].

Naone, RL ;

Coldren, LA .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2277-2280

[6] Proposal and demonstration of AlAs-oxide confinement structure for InP-based long wavelength lasers [J].

Ohnoki, N ;

Mukaihara, T ;

Hatori, N ;

Mizutani, A ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (1A) :148-149

[7] GaInAs/AlGaInAs semiconductor lasers with AlAs oxide current confinement structure [J].

Ohnoki, N ;

Hatori, N ;

Mizutani, A ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B) :1896-1899

[8] Long wavelength (1.3 mu m) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region [J].

Qian, Y ;

Zhu, ZH ;

Lo, YH ;

Huffaker, DL ;

Deppe, DG ;

Hou, HQ ;

Hammons, BE ;

Lin, W ;

Tu, YK .

APPLIED PHYSICS LETTERS, 1997, 71 (01) :25-27

[9] HIGH-PERFORMANCE UNCOOLED 1.3-MU-M ALXGAYIN1-X-YAS/INP STRAINED-LAYER QUANTUM-WELL LASERS FOR SUBSCRIBER LOOP APPLICATIONS [J].

ZAH, CE ;

BHAT, R ;

PATHAK, BN ;

FAVIRE, F ;

LIN, W ;

WANG, MC ;

ANDREADAKIS, NC ;

HWANG, DM ;

KOZA, MA ;

LEE, TP ;

WANG, Z ;

DARBY, D ;

FLANDERS, D ;

HSIEH, JJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) :511-523

← 1 →