The growth of mid-infrared emitting InAsSb/InAsP strained-layer superlattices using metal-organic chemical vapor deposition

被引：1

作者：

Biefeld, RM ^{[1
]}

Allerman, AA ^{[1
]}

Kurtz, SR ^{[1
]}

Burkhart, JH ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

COMPOUND SEMICONDUCTORS 1997 | 1998年 / 156卷

关键词：

D O I：

10.1109/ISCS.1998.711575

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the metal-organic chemical vapor deposition of InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500 degrees C, and 200 torr in a horizontal quartz reactor using trimethylindium, triethylantimony, AsH3, and PH3. By changing the layer thickness and composition we have prepared structures with low temperature (less than or equal to 20K) photoluminescence wavelengths ranging from 3.2 to 5.0 mu m. Excellent performance was observed for an SLS light emitting diode (LED) and both optically pumped and electrically injected SLS lasers. An InAsSb/InAsP SLS injection laser emitted at 3.3 mu m at 80 K with peak power of 100 mW.

引用

页码：113 / 116

页数：4

共 16 条

[1] InAsSb-based mid-infrared lasers (3.8-3.9 mu m) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition [J].