Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices

被引:585
作者
Chung, Kunook [1 ,2 ]
Lee, Chul-Ho [1 ,2 ,3 ]
Yi, Gyu-Chul [1 ,2 ]
机构
[1] Seoul Natl Univ, Natl Creat Res Initiat Ctr Semicond Nanorods, Seoul 151747, South Korea
[2] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea
[3] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Gyeongbuk, South Korea
关键词
LIGHT-EMITTING-DIODES; STIMULATED-EMISSION; THIN-FILMS; BLUE;
D O I
10.1126/science.1195403
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We fabricated transferable gallium nitride (GaN) thin films and light-emitting diodes (LEDs) using graphene-layered sheets. Heteroepitaxial nitride thin films were grown on graphene layers by using high-density, vertically aligned zinc oxide nanowalls as an intermediate layer. The nitride thin films on graphene layers show excellent optical characteristics at room temperature, such as stimulated emission. As one of the examples for device applications, LEDs that emit strong electroluminescence emission under room illumination were fabricated. Furthermore, the layered structure of a graphene substrate made it possible to easily transfer GaN thin films and GaN-based LEDs onto foreign substrates such as glass, metal, or plastic.
引用
收藏
页码:655 / 657
页数:3
相关论文
共 17 条
[1]  
[Anonymous], 2000, BLUE LASER DIODE COM
[2]   Stimulated emission in GaN thin films in the temperature range of 300-700 K [J].
Bidnyk, S ;
Little, BD ;
Schmidt, TJ ;
Cho, YH ;
Krasinski, J ;
Song, JJ ;
Goldenberg, B ;
Yang, W ;
Perry, WG ;
Bremser, MD ;
Davis, RF .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (03) :1792-1795
[3]   Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates [J].
Bour, DP ;
Nickel, NM ;
Van de Walle, CG ;
Kneissl, MS ;
Krusor, BS ;
Mei, P ;
Johnson, NM .
APPLIED PHYSICS LETTERS, 2000, 76 (16) :2182-2184
[4]   Laser Liftoff GaN Thin-Film Photonic Crystal GaN-Based Light-Emitting Diodes [J].
Cho, Hyun Kyong ;
Kim, Sun-Kyung ;
Bae, Duk Kyu ;
Kang, Bong-Cheol ;
Lee, Jeong Soo ;
Lee, Yong-Hee .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (21-24) :2096-2098
[5]   Photonic crystal laser lift-off GaN light-emitting diodes [J].
David, A ;
Fujii, T ;
Moran, B ;
Nakamura, S ;
DenBaars, SP ;
Weisbuch, C ;
Benisty, H .
APPLIED PHYSICS LETTERS, 2006, 88 (13)
[6]   VERTICAL-CAVITY, ROOM-TEMPERATURE STIMULATED-EMISSION FROM PHOTOPUMPED GAN FILMS DEPOSITED OVER SAPPHIRE SUBSTRATES USING LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
KHAN, MA ;
OLSON, DT ;
VANHOVE, JM ;
KUZNIA, JN .
APPLIED PHYSICS LETTERS, 1991, 58 (14) :1515-1517
[7]   Large-scale pattern growth of graphene films for stretchable transparent electrodes [J].
Kim, Keun Soo ;
Zhao, Yue ;
Jang, Houk ;
Lee, Sang Yoon ;
Kim, Jong Min ;
Kim, Kwang S. ;
Ahn, Jong-Hyun ;
Kim, Philip ;
Choi, Jae-Young ;
Hong, Byung Hee .
NATURE, 2009, 457 (7230) :706-710
[8]   Vertically aligned ZnO nanostructures grown on graphene layers [J].
Kim, Yong-Jin ;
Lee, Jae-Hyun ;
Yi, Gyu-Chul .
APPLIED PHYSICS LETTERS, 2009, 95 (21)
[9]   Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells [J].
Kuokstis, E ;
Yang, JW ;
Simin, G ;
Khan, MA ;
Gaska, R ;
Shur, MS .
APPLIED PHYSICS LETTERS, 2002, 80 (06) :977-979
[10]   Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils [J].
Li, Xuesong ;
Cai, Weiwei ;
An, Jinho ;
Kim, Seyoung ;
Nah, Junghyo ;
Yang, Dongxing ;
Piner, Richard ;
Velamakanni, Aruna ;
Jung, Inhwa ;
Tutuc, Emanuel ;
Banerjee, Sanjay K. ;
Colombo, Luigi ;
Ruoff, Rodney S. .
SCIENCE, 2009, 324 (5932) :1312-1314