Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

被引：23

作者：

Castiglia, A. ^{[1
]}

Feltin, E. ^{[1
]}

Dorsaz, J. ^{[1
]}

Cosendey, G. ^{[1
]}

Carlin, J. -F. ^{[1
]}

Butte, R. ^{[1
]}

Grandjean, N. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 08期

关键词：

Semiconductor lasers;

D O I：

10.1049/el:20080495

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al(0.83)In(0.17)N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guided devices at room temperature under pulsed current injection conditions. Direct comparison with structures including only a standard Al(0.07)Ga(0.93)N bottom cladding shows an improved optical confinement. This is exemplified by a decreased threshold current density.

引用

页码：521 / 522

页数：2

共 7 条

[1] Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials [J].

Carlin, JF ;

Zellweger, C ;

Dorsaz, J ;

Nicolay, S ;

Christmann, G ;

Feltin, E ;

Butté, R ;

Grandjean, N .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2005, 242 (11) :2326-2344

[2] High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN [J].

Carlin, JF ;

Ilegems, M .

APPLIED PHYSICS LETTERS, 2003, 83 (04) :668-670

[3]

COLDREN LA, 1995, DIODE LASERS PHOTONI, P45

[4] III-V nitride based light-emitting devices [J].

Nakamura, S .

SOLID STATE COMMUNICATIONS, 1997, 102 (2-3) :237-+

[5] InGaN-based multi-quantum-well-structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B) :L74-L76

[6]

Nakamura S., 2000, BLUE LASER DIODE COM

[7] GROWTH OF AIN/GAN LAYERED STRUCTURES BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

SITAR, Z ;

PAISLEY, MJ ;

YAN, B ;

RUAN, J ;

CHOYKE, WJ ;

DAVIS, RF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02) :316-322

← 1 →