Invited paper: Improved amorphous in-Ga-Zn-O TFTs

被引：45

作者：

Hayashi, Ryo ^{[1
]}

Sato, Ayumu ^{[1
]}

Ofuji, Masato ^{[1
]}

Abe, Katsumi ^{[1
]}

Yabuta, Hisato ^{[1
]}

Sano, Masafumi ^{[1
]}

Kumomi, Hideya ^{[1
]}

Nomura, Kenji ^{[2
]}

Kamiya, Toshio ^{[2
,3
]}

Hirano, Masahiro ^{[2
,4
]}

Hosono, Hideo ^{[2
,3
,4
]}

机构：

[1] Canon Inc, Canon Res Ctr, Tokyo, Japan

[2] Japan Sci & Technol Agcy, ERATO SORST, Frontier Collaborat Res Ctr, Yokohama, Kanagawa, Japan

[3] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa, Japan

[4] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Yokohama, Kanagawa, Japan

来源：

2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III | 2008年 / 39卷

关键词：

PERFORMANCE;

D O I：

10.1889/1.3069739

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We review the features of amorphous In-Ga-Zn-O (a-IGZO) film transistors (TFTs), as well as circuit operation based on thin-these TFTs. We also report a novel TFT structure which improves environmental stability of the TFT operation by taking full advantage of the a-IGZO properties, where a conventional PECVD a-SiNx:H films serve not only as an effective barrier layer but also as a hydrogen source to form the coplanar source and drain.

引用

页码：621 / +

页数：2

共 35 条

[1]

ABE, 2007, P 14 IDW, P1779

[2] Effect of UV and visible light radiation on the electrical performances of transparent TFTs based on amorphous indium zinc oxide [J].