Anisotropic electrical transport properties of a two-dimensional electron gas at SrTiO3-LaAlO3 interfaces

被引：46

作者：

Brinks, P. ^{[1
]}

Siemons, W. ^{[2
]}

Kleibeuker, J. E. ^{[1
]}

Koster, G. ^{[1
]}

Rijnders, G. ^{[1
]}

Huijben, M. ^{[1
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands

[2] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 24期

关键词：

DEPOSITION; SUBSTRATE; SRTIO3;

D O I：

10.1063/1.3600339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental evidence of strong in-plane anisotropy in electrical properties of the confined electron gas at the SrTiO3-LaAlO3 interface on top of (LaAlO3)(0.3)(Sr2AlTaO3)(0.7) substrates is provided by detailed transport measurements. Structured measurement geometries in multiple directions are used to show dependence of the sheet resistance with the in-plane angle theta, which is fitted with a sine function with a period of 180 degrees. The carrier density remains constant and a directional dependence of the carrier mobility of more than one order of magnitude is determined with respect to the orientation of the unit cell height steps present at the SrTiO3-LaAlO3 interface. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600339]

引用

收藏

页数：3

相关论文

共 16 条

[1] The chemical bond and atomic displacements in SrTiO3 from x-ray diffraction analysis [J].

Abramov, YA ;

Tsirelson, VG ;

Zavodnik, VE ;

Ivanov, SA ;

Brown, ID .

ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1995, 51 :942-951

[2] Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain [J].

Bark, C. W. ;

Felker, D. A. ;

Wang, Y. ;

Zhang, Y. ;

Jang, H. W. ;

Folkman, C. M. ;

Park, J. W. ;

Baek, S. H. ;

Zhou, H. ;

Fong, D. D. ;

Pan, X. Q. ;

Tsymbal, E. Y. ;

Rzchowski, M. S. ;

Eom, C. B. .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2011, 108 (12) :4720-4724

[3] Magnetic effects at the interface between non-magnetic oxides [J].

Brinkman, A. ;

Huijben, M. ;

Van Zalk, M. ;

Huijben, J. ;

Zeitler, U. ;

Maan, J. C. ;

Van der Wiel, W. G. ;

Rijnders, G. ;

Blank, D. H. A. ;

Hilgenkamp, H. .

NATURE MATERIALS, 2007, 6 (07) :493-496

[4] Thermal expansion of LaAlO3 and (La,Sr)(Al,Ta)O3, substrate materials for superconducting thin-film device applications [J].

Chakoumakos, BC ;

Schlom, DG ;

Urbanik, M ;

Luine, J .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (04) :1979-1982

[5] Transformation processes in LaAlO3:: Neutron diffraction, dielectric, thermal, optical, and Raman studies -: art. no. 054110 [J].

Hayward, SA ;

Morrison, FD ;

Redfern, SAT ;

Salje, EKH ;

Scott, JF ;

Knight, KS ;

Tarantino, S ;

Glazer, AM ;

Shuvaeva, V ;

Daniel, P ;

Zhang, M ;

Carpenter, MA .

PHYSICAL REVIEW B, 2005, 72 (05)

[6] Electronically coupled complementary interfaces between perovskite band insulators [J].

Huijben, Mark ;

Rijnders, Guus ;

Blank, Dave H. A. ;

Bals, Sara ;

Van Aert, Sandra ;

Verbeeck, Jo ;

Van Tendeloo, Gustaaf ;

Brinkman, Alexander ;

Hilgenkamp, Hans .

NATURE MATERIALS, 2006, 5 (07) :556-560

[7] Structure-Property Relation of SrTiO3/LaAlO3 Interfaces [J].

Huijben, Mark ;

Brinkman, Alexander ;

Koster, Gertjan ;

Rijnders, Guus ;

Hilgenkamp, Hans ;

Blank, Dave H. A. .

ADVANCED MATERIALS, 2009, 21 (17) :1665-1677

[8] Cationic Disorder and Phase Segregation in LaAlO3/SrTiO3 Heterointerfaces Evidenced by Medium-Energy Ion Spectroscopy [J].

Kalabukhov, A. S. ;

Boikov, Yu. A. ;

Serenkov, I. T. ;

Sakharov, V. I. ;

Popok, V. N. ;

Gunnarsson, R. ;

Borjesson, J. ;

Ljustina, N. ;

Olsson, E. ;

Winkler, D. ;

Claeson, T. .

PHYSICAL REVIEW LETTERS, 2009, 103 (14)

[9] Effect of oxygen vacancies in the SrTiO3 substrate on the electrical properties of the LaAlO3/SrTiO3 interface [J].

Kalabukhov, Alexey ;

Gunnarsson, Robert ;

Borjesson, Johan ;

Olsson, Eva ;

Claeson, Tord ;

Winkler, Dag .

PHYSICAL REVIEW B, 2007, 75 (12)

[10] Imposed layer-by-layer growth by pulsed laser interval deposition [J].

Koster, G ;

Rijnders, GJHM ;

Blank, DHA ;

Rogalla, H .

APPLIED PHYSICS LETTERS, 1999, 74 (24) :3729-3731