Anisotropic electrical transport properties of a two-dimensional electron gas at SrTiO3-LaAlO3 interfaces

被引：46

作者：

Brinks, P. ^{[1
]}

Siemons, W. ^{[2
]}

Kleibeuker, J. E. ^{[1
]}

Koster, G. ^{[1
]}

Rijnders, G. ^{[1
]}

Huijben, M. ^{[1
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands

[2] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 24期

关键词：

DEPOSITION; SUBSTRATE; SRTIO3;

D O I：

10.1063/1.3600339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental evidence of strong in-plane anisotropy in electrical properties of the confined electron gas at the SrTiO3-LaAlO3 interface on top of (LaAlO3)(0.3)(Sr2AlTaO3)(0.7) substrates is provided by detailed transport measurements. Structured measurement geometries in multiple directions are used to show dependence of the sheet resistance with the in-plane angle theta, which is fitted with a sine function with a period of 180 degrees. The carrier density remains constant and a directional dependence of the carrier mobility of more than one order of magnitude is determined with respect to the orientation of the unit cell height steps present at the SrTiO3-LaAlO3 interface. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600339]

引用

页数：3

共 16 条

[11] Dielectric properties of SrTiO3 thin films grown on various perovskite electrodes by pulsed laser deposition [J].