Surface modification of α-Al2O3(0001) by N2+ ion irradiation

被引：10

作者：

Choi, WK ^{[1
]}

Choi, SC

Jung, HJ

Koh, SK

Byun, DJ

Kum, DW

机构：

[1] Korea Inst Sci & Technol, Thin Film Technol Res Ctr, Seoul 130650, South Korea

[2] Korea Univ, Dept Mat Sci, Sungbuk Ku, Seoul 136701, South Korea

[3] Korea Inst Sci & Technol, Alloy Design Ctr, Seoul 130650, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1998年 / 16卷 / 06期

关键词：

D O I：

10.1116/1.581539

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The surface of sapphire most widely used as a substrate for III-V nitride growth was modified by N-2(+) ion irradiation with ion-beam energies from 100 to 1000 eV. As the ion-beam energy increased from 100 to 500 eV, the root-mean-square roughness of the surface morphology decreased. However no significant change in surface roughness at energy higher-than 500 eV was observed. From the N Is x-ray photoelectron spectroscopy core-level spectra, no peak related to a nitrogen bond could be found in the samples irradiated with;ion energy below 500 eV. An AlON peak began to appear in the samples irradiated with 600-900 eV N-2(+) ions, and two peaks corresponding to AlON and AlN were distinctively observed in the sample irradiated at 1 keV. (C) 1998 American Vacuum Society, [S0734-2101(98)00406-0].

引用

页码：3311 / 3313

页数：3

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