Characteristics of transparent ZnO based thin film transistors with amorphous HfO2 gate insulators and Ga doped ZnO electrodes

被引：51

作者：

Kim, Jong Hoon ^{[1
]}

Du Ahn, Byung ^{[1
]}

Lee, Choong Hee ^{[1
]}

Jeon, Kyung Ah ^{[1
]}

Kang, Hong Seong ^{[1
]}

Lee, Sang Yeol ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 07期

关键词：

D O I：

10.1016/j.tsf.2007.03.101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Coplanar type transparent thin film transistors (TFTs) have been fabricated on the glass substrates. The devices consist of intrinsic ZnO, Ga doped ZnO (GZO), and amorphous HfO2 for the semiconductor active channel layer, electrode, and gate insulator, respectively. GZO and HfO2 layers were prepared by using a pulsed laser deposition (PLD) and intrinsic ZnO layers were fabricated by using an rf-magnetron sputtering. The transparent TFT exhibits n-channel, enhancement mode behavior. The field effect mobility, threshold voltage, and a drain current on-to-off ratio were measured to be 14.7 cm(2)/Vs, 2 V, and 105, respectively. High optical transmittance (> 85%) in visible region makes ZnO TFTs attractive for transparent electronics. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：1529 / 1532

页数：4

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