Characteristics of conjugated hydrocarbon based thin film transistor with ionic liquid gate dielectric

被引:28
作者
Kaji, Yumiko [1 ]
Ogawa, Keiko [1 ]
Eguchi, Ritsuko [1 ]
Goto, Hidenori [1 ]
Sugawara, Yasuyuki [2 ]
Kambe, Takashi [3 ]
Akaike, Koki [1 ]
Gohda, Shin [3 ,4 ]
Fujiwara, Akihiko [5 ]
Kubozono, Yoshihiro [1 ,6 ]
机构
[1] Okayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan
[2] Kuramoto Seisakusho Co Ltd, Kurihara 9895508, Japan
[3] Okayama Univ, Dept Phys, Okayama 7008530, Japan
[4] NARD Co Ltd, Amagasaki, Hyogo 6600805, Japan
[5] Japan Synchrotron Radiat Res Inst, Hyogo 6795198, Japan
[6] Okayama Univ, Res Ctr New Funct Mat Energy Prod Storage & Trans, Okayama 7008530, Japan
基金
日本科学技术振兴机构;
关键词
Organic FET; Aromatic hydrocarbon; Electric double layer; Electrochemical transistor; Ionic liquid; Low voltage operation; FIELD-EFFECT TRANSISTORS; STILBENE-LIKE PHOTOCYCLIZATIONS; GRAPHITE RIBBONS; SUPERCONDUCTIVITY; PICENE; PHENACENES; FAMILY;
D O I
10.1016/j.orgel.2011.08.016
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin film transistors (TFTs) with ionic liquid gate dielectrics, [1-ethyl-3-methylimidazolium][bis(trifluoromethanesulfonyl) imide] (emim[TFSI]) and [1-butyl-3-methylimidazolium][hexafluorophosphate] (bmim[PF6]), are fabricated with thin films of one dimensional (1D) hydrocarbon, [7]phenacene. P-channel characteristics are observed for [7] phenacene TFTs with both ionic liquids by use of platinum electrode. The field-effect mobility mu for [7]phenacene TFT with bmim[PF6] was recorded to be 0.28 cm(2) V-1 s(-1). The value of absolute threshold voltage, vertical bar V-TH vertical bar, was less than 2.5 V, showing low-voltage operation. The accumulation of hole in the [7]phenacene TFTs with ionic liquids was confirmed from the voltage or time dependence of capacitance in metal-insulator-semiconductor structure, which shows that these TFTs operate electrochemically and the carriers are accumulated in the whole of [7]phenacene thin films. (C) 2011 Elsevier B. V. All rights reserved.
引用
收藏
页码:2076 / 2083
页数:8
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