Ohmic contacts to p-6H-SiC using focused ion-beam surface-modification and pulsed laser epitaxial TiN deposition

被引：15

作者：

Iliadis, AA ^{[1
]}

Andronescu, SN

Edinger, K

Orloff, JH

Vispute, RD

Talyansky, V

Sharma, RP

Venkatesan, T

Wood, MC

Jones, KA

机构：

[1] Univ Maryland, Dept Elect Engn, College Pk, MD 20742 USA

[2] Univ Maryland, Dept Phys, Ctr Supercond, College Pk, MD 20742 USA

[3] Army Res Lab, Adelphi, MD 20783 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 24期

关键词：

D O I：

10.1063/1.122802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The development of low-resistance Ohmic metallizations to p-type 6H-SiC, using a focused ion-beam (FIB)-Ga surface-modification and ex situ pulsed laser (PLD) epitaxial TiN deposition without further annealing, is reported. The FIB-Ga surface-modification and PLD epitaxial TiN metallizations showed a minimum value of contact resistance of 4.4 X 10(-5) Ohm cm(2) at an ion dose and energy of 5.0 X 10(16) ions/cm(2) and 20 keV, respectively. Auger analysis data indicated well-defined interfaces between the metal and the semiconductor, and a significant subsurface Ga concentration. (C) 1998 American Institute of Physics. [S0003-6951(98)01450-8].

引用

页码：3545 / 3547

页数：3

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