Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding

被引：20

作者：

Kudryk, Ya Ya ^{[1
]}

Tkachenko, A. K. ^{[2
]}

Zinovchuk, A. V. ^{[2
]}

机构：

[1] V Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine

[2] Ivan Franko Zhytomyr State Univ, UA-10008 Zhytomyr, Ukraine

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2012年 / 27卷 / 05期

关键词：

QUANTUM-WELL STRUCTURE; LEDS; NITRIDE; GAN;

D O I：

10.1088/0268-1242/27/5/055013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature-dependent internal quantum efficiency (IQE) of multiple quantum well InGaN/GaN light-emitting diodes (LEDs) has been investigated. IQE versus current relation is analysed using the modified rate equation model that takes into account the current crowding effect at different temperatures. The results of calculations are consistent with the fact that droop in IQE at higher currents originates from Auger recombination increased by current crowding. It is shown that unusual experimentally observed temperature dependence of the efficiency droop can be explained by stronger lateral nonuniformity of carrier injection at low temperatures without any assumptions about carrier delocalization from In-rich regions in quantum wells.

引用

页数：5

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