Hot Electron Field Emission via Individually Transistor-Ballasted Carbon Nanotube Arrays

被引：41

作者：

Li, Chi ^{[1
,2
]}

Zhang, Yan ^{[1
]}

Cole, Matthew T. ^{[1
]}

Shivareddy, Sai G. ^{[1
]}

Barnard, Jon S. ^{[3
]}

Lei, Wei ^{[2
]}

Wang, Baoping ^{[2
]}

Pribat, Didier ^{[4
]}

Amaratunga, Gehan A. J. ^{[1
]}

Milne, William I. ^{[1
,5
]}

机构：

[1] Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB3 0FA, England

[2] Southeast Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Jiangsu, Peoples R China

[3] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[4] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea

[5] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea

来源：

ACS NANO | 2012年 / 6卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

carbon nanotubes; field emission; transistor; ballasted; hot electrons; EMITTERS; GROWTH; SI;

D O I：

10.1021/nn300111t

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present electronically controlled field emission characteristics of arrays of individually ballasted carbon nanotubes synthesized by plasma-enhanced chemical vapor deposition on silicon-on-insulator substrates. By adjusting the source-drain potential we have demonstrated the ability to controllable limit the emission current density by more than 1 order of magnitude. Dynamic control over both the turn-on electric field and field enhancement factor have been noted. A hot electron model is presented. The ballasted nanotubes are populated with hot electrons due to the highly crystalline Si channel and the high local electric field at the nanotube base. This positively shifts the Fermi level and results in a broad energy distribution about this mean, compared to the narrow spread, lower energy thermalized electron population in standard metallic emitters. The proposed vertically aligned carbon nanotube field-emitting electron source offers a viable platform for X-ray emitters and displays applications that require accurate and highly stable control over the emission characteristics.

引用

页码：3236 / 3242

页数：7

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