Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

被引：446

作者：

Kioupakis, Emmanouil ^{[1
]}

Rinke, Patrick ^{[1
]}

Delaney, Kris T. ^{[1
]}

Van de Walle, Chris G. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 16期

关键词：

D O I：

10.1063/1.3570656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN-based light-emitting diodes (LEDs) exhibit a significant efficiency loss (droop) when operating at high injected carrier densities, the origin of which remains an open issue. Using atomistic first-principles calculations, we show that this efficiency droop is caused by indirect Auger recombination, mediated by electron-phonon coupling and alloy scattering. By identifying the origin of the droop, our results provide a guide to addressing the efficiency issues in nitride LEDs and the development of efficient solid-state lighting. (C) 2011 American Institute of Physics. [doi:10.1063/1.3570656]

引用

页数：3

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