Mass effect of etching gases in vertical and smooth dry etching of InP

被引：19

作者：

Matsutani, A

Ohtsuki, H

Muta, S

Koyama, F

Iga, K

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Samco Int Inc, Fujimi Ku, Kyoto 6128443, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 3A期

关键词：

dry etching; inductively coupled plasma (ICP); electron cyclotron resonance (ECR) plasma etching; InP; Cl2SiCl4;

D O I：

10.1143/JJAP.40.1528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compared several kinds of etching gases in inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) plasma etching processes for investigating the etching performance. It was found that a heavy etching gas such as SiCl4 plays an important role for smooth etching of InP, which is independent of ICP and ECR plasma sources.

引用

页码：1528 / 1529

页数：2

共 4 条

[1] Emission spectrochemical analysis in dry etching process of InP by Cl2 inductively coupled plasma [J].

Matsutani, A ;

Ohtsuki, H ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (10) :6109-6110

[2] Plasma characterization in chlorine-based reactive ion beam etching and chemically assisted ion beam etching [J].

Matsutani, A ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (5A) :2747-2751

[3] Plasma diagnostics in inductively coupled plasma etching using Cl2/Xe [J].

Matsutani, A ;

Ohtsuki, H ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (3A) :1435-1436

[4] Vertical and smooth etching of InP by Cl2/Xe inductively coupled plasma [J].

Matsutani, A ;

Ohtsuki, H ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (7A) :4260-4261

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