Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift

被引：53

作者：

Cho, JH

Sone, C

Park, Y

Yoon, E

机构：

[1] Samsung Adv Inst Technol, Photon Program Team, Suwon 440600, South Korea

[2] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

[3] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 09期

关键词：

D O I：

10.1002/pssa.200520041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The junction temperature rise of light emitting diodes due to self-heating effects during operation of the LED is measured using the electro-luminescence of the band-to-band recombination. This method is useful for the junction temperature monitoring of small geometry devices, indirectly. The junction temperature measured in InGaN/GaN multi-quantum well LEDs with 1 mm(2) device size rises to 180 degrees C when the input current is 380 mA. The relationship between the junction temperature and the LED efficiency is clarified with experimental results.

引用

页码：1869 / 1873

页数：5

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