Suppression of phonon replica in the radiative recombination of an MBE-grown type-II Ge/Si quantum dot

被引：21

作者：

Fukatsu, S

Sunamura, H

Shiraki, Y

Komiyama, S

机构：

[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 153, Japan

[2] Univ Tokyo, Dept Pure & Appl Sci, Meguro Ku, Tokyo 153, Japan

来源：

THIN SOLID FILMS | 1998年 / 321卷

基金：

日本科学技术振兴机构;

关键词：

radiative recombination; molecular beam epitaxy; type-II Ge/Si quantum dot;

D O I：

10.1016/S0040-6090(98)00445-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Phonon-suppressed indirect-gap radiative recombination was observed from a type-II Ge/Si dot grown by gas source molecular beam epitaxy (MBE). The phonon suppression occurs due to the formation of an electronic dot and the phononless k-diagonal Delta(1,c) - Gamma(25',v) interband recombination of three-dimensionally confined excitons is understood in the context of the elimination of momentum conservation. The dot confinement is established by large self-organized Stranski-Krastanow dots and the interface trapping due to hole space charge. The dot characteristics were confirmed by detailed measurements and the electronic dot precursor was found near the growth mode transition. (C) 1998 Elsevier Science SIA. All rights reserved.

引用

页码：65 / 69

页数：5

共 17 条

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