Low-threshold continuons-wave lasing in photopumped GaInAsP microdisk lasers

被引：15

作者：

Fujita, M ^{[1
]}

Teshima, K ^{[1
]}

Baba, T ^{[1
]}

机构：

[1] Yokohama Natl Univ, Fac Elect & Comp Engn, Hodogaya Ku, Yokohama, Kanagawa 2408501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 8B期

关键词：

GaInAsP; microcavity; microdisk; photopumped; semiconductor laser;

D O I：

10.1143/JJAP.40.L875

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated continuous-wave lasing at room temperature in a photopumped GaInAsP microdisk laser fabricated by Cl-2/Xe inductively coupled plasma etching, The minimum threshold pump power was as low as 30 muW. This value is 0.7 times the lowest threshold in the current injection device due to the uniform carrier distribution by photopumping. Higher thermal resistance and odd-order azimuthal mode lasing as a result of a narrower pedestal and no upper post structure were observed.

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收藏

页码：L875 / L877

页数：3

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