Studies on the morphology of Al2O3 thin films grown by atomic layer epitaxy

被引：50

作者：

Ritala, M ^{[1
]}

Saloniemi, H ^{[1
]}

Leskela, M ^{[1
]}

Prohaska, T ^{[1
]}

Friedbacher, G ^{[1
]}

Grasserbauer, M ^{[1
]}

机构：

[1] VIENNA TECH UNIV,INST ANALYT CHEM,A-1060 VIENNA,AUSTRIA

来源：

THIN SOLID FILMS | 1996年 / 286卷 / 1-2期

基金：

芬兰科学院;

关键词：

epitaxy; atomic force microscopy; surface morphology; aluminium oxide;

D O I：

10.1016/S0040-6090(95)08524-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomic force microscopy was employed to follow the development of Al2O3 films deposited by atomic layer epitaxy (ALE) from AlCl3 and H2O. In contrast to the earlier observations that substantial agglomeration takes place in the beginning of the ALE growth of polycrystalline films, only very small agglomerates were formed during the growth of the amorphous Al2O3 films. Consequently, no pronounced surface roughening took place with increasing film thickness and the resulting films remained much smoother than the polycrystalline films deposited by ALE. Even a 730 nm thick Al2O3 film had a root-mean-square roughness of only 0.7 nm.

引用

页码：54 / 58

页数：5

共 21 条

[1]

AARIK J, 1990, ACTA POLYTECH SCAND, V195, P201

[2] MICROFABRICATION OF CANTILEVER STYLI FOR THE ATOMIC FORCE MICROSCOPE [J].

ALBRECHT, TR ;

AKAMINE, S ;

CARVER, TE ;

QUATE, CF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (04) :3386-3396

[3] CHARACTERIZATION OF THIN-FILM ELECTROLUMINESCENT STRUCTURES BY SIMS AND OTHER ANALYTICAL TECHNIQUES [J].

ANTSON, H ;

GRASSERBAUER, M ;

HAMILO, M ;

HILTUNEN, L ;

KOSKINEN, T ;

LESKELA, M ;

NIINISTO, L ;

STINGEDER, G ;

TAMMENMAA, M .

FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE, 1985, 322 (02) :175-180

[4] GROWTH AND CHARACTERIZATION OF ALUMINUM-OXIDE THIN-FILMS DEPOSITED FROM VARIOUS SOURCE MATERIALS BY ATOMIC LAYER EPITAXY AND CHEMICAL VAPOR-DEPOSITION PROCESSES [J].

HILTUNEN, L ;

KATTELUS, H ;

LESKELA, M ;

MAKELA, M ;

NIINISTO, L ;

NYKANEN, E ;

SOININEN, P ;

TIITTA, M .

MATERIALS CHEMISTRY AND PHYSICS, 1991, 28 (04) :379-388

[5] LAYERED TANTALUM-ALUMINUM OXIDE-FILMS DEPOSITED BY ATOMIC LAYER EPITAXY [J].

KATTELUS, H ;

YLILAMMI, M ;

SAARILAHTI, J ;

ANTSON, J ;

LINDFORS, S .

THIN SOLID FILMS, 1993, 225 (1-2) :296-298

[6] ATOMIC LAYER EPITAXY GROWTH OF TANTALUM OXIDE THIN-FILMS FROM TA(OC2H5)(5) AND H2O [J].

KUKLI, K ;

RITALA, M ;

LESKELA, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (05) :1670-1675

[7]

LESKELA M, 1990, ATOMIC LAYER EPITAXY, P1

[8] CORRECTION [J].

MEYER, G .

APPLIED PHYSICS LETTERS, 1988, 53 (24) :2400-2400

[9] ATOMIC LAYER EPITAXY IN THE GROWTH OF COMPLEX THIN-FILM STRUCTURES FOR ELECTROLUMINESCENT APPLICATIONS [J].

NIINSTO, L ;

LESKELA, M .

APPLIED SURFACE SCIENCE, 1994, 82-3 :454-459

[10] ATOMIC-FORCE MICROSCOPY STUDY OF TITANIUM-DIOXIDE THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY [J].

RITALA, M ;

LESKELA, M ;

JOHANSSON, LS ;

NIINISTO, L .

THIN SOLID FILMS, 1993, 228 (1-2) :32-35

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