Morphology of porous silicon layers: image of active sites from reductive deposition of copper onto the surface

被引:24
作者
Coulthard, I [1 ]
Sham, TK [1 ]
机构
[1] Univ Western Ontario, Dept Chem, London, ON N6A 5B7, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
porous silicon; reductive deposition; morphology;
D O I
10.1016/S0169-4332(97)00686-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report a scanning electron microscopy (SEM) investigation of the morphology of porous silicon layers and comparisons between our observations and a recent theory for its formation and morphology. Also examined was the use of porous silicon as a reducing agent in the preparation of Cu dispersed on the surface of the porous silicon. The morphology of the resulting copper deposits on the surface of the porous silicon layers in rum was used to infer the morphology of the hydrogenated, chemically active sites of the porous silicon. Conditions necessary for the reduction to take place, and the effect of the deposition upon the optical luminescence of the porous silicon are noted. (C) 1998 Elsevier Science B.V.
引用
收藏
页码:287 / 291
页数:5
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