Temperature and frequency dependence of the capacitance of heavily irradiated silicon diodes

被引：15

作者：

Borchi, E ^{[1
]}

Bruzzi, M ^{[1
]}

Pirollo, S ^{[1
]}

Sciortino, S ^{[1
]}

机构：

[1] Dipartimento Energet Firenze, I-50139 Florence, Italy

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 11期

关键词：

D O I：

10.1016/S0038-1101(98)00186-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The a.c. capacitance of p(+)n silicon diodes irradiated with 1 MeV neutrons in the fluence range from 4 x 10(12) to 4 x 10(15) cm(-2) has been measured as a function of temperature and test signal frequency. A correlation between the radiation-induced defects observed by thermally stimulated currents analysis and the experimental capacitance has been carried out. The C(T) and C(f) curves have been found to be strongly influenced by the presence of a dominant radiation-induced defect with energy level E-1 = E-C-0.46 eV below the conduction band and a capture cross section sigma approximate to 10(-15) cm(2) which is consistent with a divacancy related complex. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.

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收藏

页码：2093 / 2096

页数：4

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