Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studies

被引：4

作者：

Hidalgo, P ^{[1
]}

Méndez, B

Piqueras, J

Dutta, PS

Dieguez, E

机构：

[1] Univ Complutense Madrid, Fac Fis, Dept Fis Mat, E-28040 Madrid, Spain

[2] Rensselaer Polytech Inst, Dept Mech Engn, Troy, NY 12180 USA

[3] Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 108卷 / 12期

关键词：

semiconductors; scanning electron microscopy; optical properties; luminescence;

D O I：

10.1016/S0038-1098(98)00445-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of aluminium on the defect structure of GaSb crystals, grown by the vertical Bridgman technique, has been investigated by cathodoluminescence (CL) in the scanning electron microscope. Crystals have been found to be highly homogeneous along the growth axis with the exception of the top end which showed Al accumulation. The CL results show decoration of extended defects by Al but contrary to the case of other dopants Al has not been found to cause a significative reduction of native accepters. A CL band at about 850 meV appears to be related to the presence of aluminium. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：997 / 1000

页数：4

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