Property of single-crystalline si TFTs fabricated with μ-Czochralski (grain filter) process

被引：11

作者：

Ishihara, R ^{[1
]}

van der Wilt, PC ^{[1
]}

van Dijk, BD ^{[1
]}

Metselaar, JW ^{[1
]}

Beenakker, CIA ^{[1
]}

机构：

[1] Delft Univ Technol, DIMES ECTM, NL-2628 CT Delft, Netherlands

来源：

POLY-SILICON THIN FILM TRANSISTOR TECHNOLOGY AND APPLICATIONS IN DISPLAYS AND OTHER NOVEL TECHNOLOGY AREAS | 2003年 / 5004卷

关键词：

excimer-laser; thin-film transistor; poly-Si; single-crystalline Si; location-control;

D O I：

10.1117/12.482582

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Formation of TFTs inside location-controlled large Si grains with a low temperature process is an attractive approach for realizing system-circuit integration with displays on a large glass substrate. Local structural variations of the substrate using photolithography allows an accurate location-control of the large Si grains in excimer-laser crystallization. Single-crystalline Si (c-Si) TFTs was formed inside a location-controlled large (6 mum) grain by mu-Czochraski process of a-Si film. The c-Si TFTs showed field effect mobility of 450 cm(2)/Vs on average. Crystallization characteristics, spread of the TFT characteristics and effects of process parameters will be reviewed and discussed.

引用

页码：10 / 19

页数：10

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