Hydrogen molecules in boron-doped crystalline silicon

被引:56
作者
Pritchard, RE
Tucker, JH
Newman, RC
Lightowlers, EC
机构
[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Interdisciplinary Res Ctr Semicond Mat, London SW7 2BZ, England
[2] Kings Coll London, Dept Phys, London WC2R 2LS, England
关键词
D O I
10.1088/0268-1242/14/1/011
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Boron-doped, float zone silicon has been hydrogenated at 1300 degrees C and then quenched to room temperature. Infrared absorption measurements of the samples in their as-quenched state and following anneals at 160 degrees C reveal the vibrational mode from H-B pairs, together with the line that we have assigned to the vibrational mode of isolated hydrogen molecules (nu(3)HH = 3618 cm(-1)). Annealing leads to irreversible increases in the concentrations of H-B pairs and decreases in the concentration of nu(3HH) centres. The results imply that H-2 molecules diffuse to boron accepters and that there is subsequent dissociation of these molecules with the formation of H-B pairs. The measurements confirm an earlier proposal that 'hidden hydrogen' present in such samples is in the form of isolated molecules.
引用
收藏
页码:77 / 80
页数:4
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