Gain characteristics of quantum dot injection lasers

被引：80

作者：

Zhukov, AE

Kovsh, AR

Ustinov, VM

Egorov, AY

Ledentsov, NN

Tsatsul'nikov, AF

Maximov, MV

Shernyakov, YM

Kopchatov, VI

Lunev, AV

Kop'ev, PS

Bimberg, D

Alferov, ZI

机构：

[1] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1999年 / 14卷 / 01期

关键词：

D O I：

10.1088/0268-1242/14/1/020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gain characteristics of injection lasers based on self-organized quantum dots (QDs) were studied experimentally for two systems: InGaAs QDs in an AlGaAs matrix on a GaAs substrate and InAs QDs in an InGaAs matrix on an InP substrate. A ground-to-excited state transition was observed with increasing threshold gain. An empirical equation is proposed to fit the current density dependence of the QD gain. This fitting equation is shown to be valid for both the ground and excited state lasing in the systems under study in the 77-300 K temperature range. The effect of QD surface density on gain characteristics is calculated analytically.

引用

页码：118 / 123

页数：6

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