A near-field scanning optical microscopy study of the photoluminescence from GaN films

被引：27

作者：

Liu, JT ^{[1
]}

Perkins, NR ^{[1
]}

Horton, MN ^{[1
]}

Redwing, JM ^{[1
]}

Tischler, MA ^{[1
]}

Kuech, TF ^{[1
]}

机构：

[1] ADV TECHNOL MAT INC,DANBURY,CT 06810

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 23期

关键词：

D O I：

10.1063/1.117231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have achieved spatially resolved photoluminescence from GaN films using a near-field scanning optical microscope (NSOM). GaN films grown by hydride vapor phase epitaxy (HVPE)and metal-organic vapor phase epitaxy (MOVPE) on sapphire substrates have been studied. We have performed spatial scans of topography, band edge, and yellow luminescence signals. Atomic force microscopy measurements were also made and compared with the NSOM topography. We have found spatial variations in photoluminescence characteristics at the submicron scale for both HVPE and MOVPE GaN. The observed enhancement of yellow luminescence at multiatomic step edges on the HVPE GaN surface suggests that the yellow luminescence is associated with chemical impurities incorporated during the growth of GaN films. (C) 1996 American Institute of Physics.

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页码：3519 / 3521

页数：3

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