Model of low frequency noise in polycrystalline silicon thin-film transistors

被引：35

作者：

Dimitriadis, CA ^{[1
]}

Kamarinos, G

Brini, J

机构：

[1] Univ Thessaloniki, Dept Phys, Salonika 54006, Greece

[2] ENSERG, LPCS, F-38016 Grenoble, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 08期

关键词：

grain boundary traps; low frequency noise; oxide traps; polysilicon TFTs;

D O I：

10.1109/55.936350

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model for the low frequency noise of polycrystalline silicon thin film transistors (polysilicon TFTs) is proposed. The model takes into account fluctuations of the grain boundary potential barrier induced by those of the grain boundary interface charge and fluctuations of carriers due to trapping in oxide traps located close to the interface. Using the proposed model, it is demonstrated that both grain boundary and oxide taps can be determined in polysilicon TFTs from noise measurements.

引用

页码：381 / 383

页数：3

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