Optical and structural properties of ZnO thin films;: effects of high energy electron irradiation and annealing

被引：28

作者：

Gur, Emre ^{[1
]}

Asil, Hatice ^{[1
]}

Coskun, C. ^{[1
]}

Tuzemen, S. ^{[1
]}

Meral, Kadem ^{[2
]}

Onganer, Y. ^{[2
]}

Serifoglu, Korkmaz ^{[3
]}

机构：

[1] Ataturk Univ, Art & Sci Fac, Dept Phys, TR-25240 Erzurum, Turkey

[2] Ataturk Univ, Art & Sci Fac, Dept Chem, TR-25240 Erzurum, Turkey

[3] Ataturk Univ, Fac Med, Dept Radiat Oncol, TR-25240 Erzurum, Turkey

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2008年 / 266卷 / 09期

关键词：

ZnO; electron irradiation; PL; XRD; annealing; defect; recombination lifetime;

D O I：

10.1016/j.nimb.2008.03.198

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

High energy electron irradiation (HEEI) effects on the as-grown and annealed ZnO thin films grown by electrochemical deposition were investigated. Both samples were exposed to the sequential electron irradiations of 6, 12 and 15 MeV energies at a fluence of 1 x 10(12) e(-)/cm(2). The results of X-ray diffraction suggest that a highly strong crystallographic structure can be produced by annealing process. Photoluminescence (PL) studies show that the El produces violet emission which results from the zinc interstitial. Recombination lifetime (RL) values of the both films reveal that the high quality crystals are obtained. The decreasing trends of RL values with increasing electron energy have been explained by the formation of crystal defects due to the HEEL (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：2021 / 2026

页数：6

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